2SD1805 no.2115-1/9 2,4 3 1 applications ? strobes, voltage regulators, relay drivers, lamp drivers features ? low saturation voltage ? fast switching time ? large current capacity ? small and slim package making it easy to make 2SD1805-applied sets smaller speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 60 v collector-to-emitter voltage v ceo 20 v emitter-to-base voltage v ebo 6v collector current i c 5a collector current (pulse) i cp 8a collector dissipation p c 1w tc=25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : en2115c 60612 tkim ta-4167/22599th (kt)/8309mo/5277ki/o236ki, ts sanyo semiconductors data sheet 2SD1805 npn epitaxial planar silicon transistor high-current switching applications http:// semicon.sanyo.com/en/network product & package information ? package : tp ? package : tp-fa ? jeita, jedec : sc-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-f a d1805 lot no. rank 2SD1805f-e 2SD1805g-e 2SD1805f-tl-e 2SD1805g-tl-e
2SD1805 no.2115-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =50v, i e =0a 100 na emitter cutoff current i ebo v eb =5v, i c =0a 100 na dc current gain h fe 1v ce =2v, i c =500ma 120* 560* h fe 2v ce =2v, i c =3a 95 gain-bandwidth product f t v ce =10v, i c =50ma 120 mhz output capacitance cob v cb =10v, f=1mhz 45 pf collector-to-emitter saturation voltage v ce (sat) i c =3a, i b =60ma 220 500 mv base-to-emitter saturation voltage v be (sat) i c =3a, i b =60ma 1.5 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 60 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 20 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6 v turn-on time t on see speci ed test circuit 30 ns storage time t stg 300 ns fall time t f 40 ns * : the 2SD1805 is classi ed by 500ma h fe as follows. rank e f g h fe 120 to 200 160 to 320 280 to 560 switching time test circuit ordering information device package shipping memo 2SD1805f-e tp 500pcs./bag pb free 2SD1805g-e tp 500pcs./bag 2SD1805f-tl-e tp-fa 700pcs./reel 2SD1805g-tl-e tp-fa 700pcs./reel v r r b + + input output r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =2a, v cc =10v v cc v be
2SD1805 no.2115-3/9 i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v 5 4 3 2 1 0 0123 5 4 i b =0 itr10035 40ma 30ma 20ma 15ma 10ma 5ma 5 4 3 2 1 0 0 0.2 0.4 0.6 1.0 0.8 i b =0 60ma 50ma 40ma 30ma 20ma 15ma 10ma 5ma itr10036 v be (sat) -- i c collector current, i c -- a cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v v ce (sat) -- i c collector current, i c -- a f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- ma h fe -- i c dc current gain, h fe collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv base-to-emitter saturation voltage, v be (sat) -- v i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v 23 5 10 23 5 100 7 7 1000 1000 100 10 2 2 7 5 7 5 3 3 23 5 1.0 23 5 10 7 7 100 100 10 2 2 7 5 3 itr10039 2 3 5 2 3 5 10 7 100 7 1000 23 55 0.01 0.1 23 5 1.0 23 5 10 v ce =10v itr10041 itr10040 i c / i b =50 2 3 5 2 3 5 7 1.0 7 10 23 55 0.01 0.1 23 5 1.0 23 5 10 itr10042 i c / i b =50 f=1mhz ta=75 c 75 c --25 c 25 c ta= --25 c 25 c 0 0.2 0.4 0.6 0.8 1.2 1.0 6 5 4 3 2 1 0 itr10037 2 3 5 2 3 5 7 100 7 1000 23 55 0.01 0.1 23 5 1.0 23 5 10 itr10038 v ce =2v ta=75 c ta=75 c 25 c v ce =2v --25 c --25 c 25 c
2SD1805 no.2115-4/9 p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v 0.1 5 7 7 1.0 7 10 5 3 3 2 5 3 2 2 1.0 0.1 10 57 2 257 3 323 itr10043 i c i cp 100ms dc operation tc=25 c 10ms 1ms dc operation ta=25 c 0 10 6 16 12 14 15 8 4 2 1 0 40 120 160 80 20 100 140 60 itr10044 no heat sink tc=25 c single pulse
2SD1805 no.2115-5/9 taping speci cation 2SD1805f-tl-e, 2SD1805g-tl-e
2SD1805 no.2115-6/9 outline drawing land pattern example 2SD1805f-tl-e, 2SD1805g-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
2SD1805 no.2115-7/9 bag packing speci cation 2SD1805f-e, 2SD1805g-e
2SD1805 no.2115-8/9 outline drawing 2SD1805f-e, 2SD1805g-e mass (g) unit 0.315 * for reference mm
2SD1805 ps no.2115-9/9 this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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